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描述
sia413dj-t1-ge3
MOSFET 12V 12A 19W 29mohm @ 4.5V
否
STMicroelectronics
N-Channel
650 V
25 V
130 A 电阻汲极/源极
0.014 Ohms
Single
Through Hole
Max247
Tube
SIA413DJ-T1-GE3
下载资料
VBsemi Electronics Co. Ltd
VBSEMI
9
1252 kb
P-Channel 20 V (D-S) MOSFET